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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION With TO-220Fa package Complement to type 2SD1264/1264A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER VCBO VCEO HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE 2SB940 2SB940A 2SB940 2SB940A OND IC CONDITIONS TOR UC VALUE -200 -200 -150 UNIT Open emitter V Open base -180 Open collector -6 -2 -3 Ta=25ae 2 V VEBO IC ICM V A A PC Collector power dissipation TC=25ae 30 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB940 V(BR)CEO Collector-emitter breakdown voltage 2SB940A V(BR)CBO V(BR)EBO VCEsat VBE IEBO ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain IC=-50|I IC=-500|I A ,IE=0 A ,IC=0 IC=-5mA ,IB=0 CONDITIONS 2SB940,2SB940A SYMBOL MIN -150 TYP. MAX UNIT V -180 -200 -6 -1.0 -1.0 -50 -50 60 |I |I V V V V A A IC=-0.5A, IB=-50mA IC=-0.4A ; VCE=-10V VEB=-4V; IC=0 VCB=-200V; IE=0 IC=-0.15A ; VCE=-10V ANG CH P 100-240 Transition frequency hFE-1 Classifications Q 60-140 IN EMIC ES IC=-0.4A ; VCE=-10V IC=-0.5A; VCE=-10V,f=10MHz OND 50 TOR UC 240 30 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB940,2SB940A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A SEM GE HAN INC OND IC TOR UC 4 |
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